Metal-oxide-semiconductor field effect transistor (MOSFET) is the device of choice and elementary building block of modern computers. Acting as tiny switches within computers, smartphones, and many other electronic devices, MOSFETs enable society in the twenty-first century to function quickly and efficiently. As progressing technology has demanded faster switching and power efficiency, MOSFET devices have rapidly scaled down in size. Scaling down in size offers many benefits, such as faster switching, lower power consumption, and higher chip density. However, this size reduction presents some design challenges, as very small devices have different characteristics, problems, and considerations than their larger counterparts.
Here the Synopsys Sentaurus Process and Device software was used to simulate the design and fabrication of modern short channel MOSFET devices. MOSFETs are 4 terminal devices which are fabricated on silicon wafer using different materials, process masks, and doping. I created three different devices throughout my project: an n-channel MOSFET (NMOS), a p-channel MOSFET (PMOS), and a PMOS with SiGe heterojunctions. The simulations for the electrical performance of these devices included characteristic graphs to obtain parameters such as threshold voltage, leakage current, channel length modulation parameter, and subthreshold swing. Results will be presented.